Highly Scaled Tunnel FET With Tight Pitch and Method to Fabricate Same

摘要

A structure includes a substrate and a tunnel field effect transistor (TFET). The TFET includes a source region disposed in the substrate having an overlying source contact, the source region containing first semiconductor material having a first doping type; a drain region disposed in the substrate having an overlying drain contact, the drain region containing second semiconductor material having a second, opposite doping type; and a gate structure that overlies a channel region between the source and the drain. The source region and the drain region are asymmetric with respect to one another such that one contains a larger volume of semiconductor material than the other one. A method is disclosed to fabricate a plurality of the TFETs using a plurality of spaced apart mandrels having spacers. A pair of the mandrels and the associated spacers is processed to form four adjacent TFETs without requiring intervening lithographic processes.

主权项

1. A structure, comprising:
a substrate; and a tunnel field effect transistor (TFET) comprised of a source region disposed in the substrate and having an overlying source contact, the source region comprised of first semiconductor material having a first doping type, a drain region disposed in the substrate and having an overlying drain contact, the drain region comprised of second semiconductor material having a second doping type opposite the first doping type, and a gate structure that overlies a channel region disposed between the source region and the drain region; where the source region and the drain region are asymmetric with respect to one another and one of the source region and the drain region contains a larger volume of semiconductor material than the other one of the source region and drain region.