ETCHING METHOD AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

The present disclosure relates to an etchant, a method of making an etchant, an etching method and a method of fabricating a semiconductor device using the same. The etching method includes supplying an etchant on an etch-target layer to etch the etch-target layer in a wet etch manner. The etchant contains a basic compound and a sugar alcohol, and the basic compound contains ammonium hydroxide or tetraalkyl ammonium hydroxide. In the etchant, the sugar alcohol has 0.1 to 10 parts by weight for every 100 parts by weight of the basic compound.

主权项

1. A method of manufacturing a semiconductor device, comprising:
supplying an etchant on an etch-target layer on a semiconductor substrate to etch the etch-target layer with a wet etch process, wherein the etchant comprises a basic compound and a sugar alcohol, wherein the basic compound comprises ammonium hydroxide or tetraalkyl ammonium hydroxide, and wherein, in the etchant, the sugar alcohol has 0.1 to 10 parts by weight for every 100 parts by weight of the basic compound.