THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE

摘要

A three-dimensional semiconductor memory device includes a stack on a substrate including electrodes vertically stacked on a substrate, lower insulating patterns disposed between the stack and the substrate, the lower insulating patterns being adjacent to both sidewalls of the stack and being spaced apart from each other, a plurality of vertical structures penetrating the stack and being connected to the substrate, and a data storing pattern between the stack and the vertical structures, the data storing pattern including a portion disposed between the lowermost one of the electrodes and the substrate.

主权项

1. A three-dimensional (3D) semiconductor memory device, comprising:
a stack comprising electrodes vertically stacked on a substrate; lower insulating patterns interposed between the stack and the substrate, the lower insulating patterns being adjacent to both sidewalls of the stack and being horizontally spaced apart from each other; a plurality of vertical structures penetrating the stack and being connected to the substrate; and a data storing pattern between the stack and the vertical structures, the data storing pattern including a portion disposed between a lowermost one of the electrodes and the substrate.