THREE DIMENSIONAL MEMORY DEVICE HAVING ISOLATED PERIPHERY CONTACTS THROUGH AN ACTIVE LAYER EXHUME PROCESS

摘要

A three dimensional memory device is described having an array region and a periphery region. The array region has a three dimensional stack of storage cells. The periphery region has contacts that extend from above the three dimensional stack of storage cells to below the three dimensional stack of storage cells. The periphery region is substantially devoid of conducting and/or semi-conducting layers of the three dimensional stack of storage cells.