| 发明名称 |
Light Emitting Diode Chip |
| 摘要 |
A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the microstructures is A2, such that A1 and A2 satisfy the relation of 0.1≦A2/(A1+A2)≦0.5. The light emitting diode element layer is disposed on the growth surface of the substrate. |
| 申请公布号 |
US2017084785(A1) |
申请公布日期 |
2017.03.23 |
| 申请号 |
US201615366128 |
申请日期 |
2016.12.01 |
| 申请人 |
Everlight Electronics Co., Ltd. ;Southern Taiwan University of Science and Technology |
发明人 |
Lee Ming-Lun |
| 分类号 |
H01L33/22;H01L33/10;H01L33/00;H01L33/42 |
主分类号 |
H01L33/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting diode chip comprising:
a substrate comprising a growth surface and a plurality of microstructures on the growth surface, wherein a surface roughness of the growth surface does not exceed 10 nanometers; and a light emitting diode element layer disposed on the growth surface. |
| 地址 |
New Taipei City TW |
