发明名称 |
DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM |
摘要 |
Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal. |
申请公布号 |
US2017084702(A1) |
申请公布日期 |
2017.03.23 |
申请号 |
US201615348507 |
申请日期 |
2016.11.10 |
申请人 |
Slack Glen A.;Schowalter Leo J. |
发明人 |
Slack Glen A.;Schowalter Leo J. |
分类号 |
H01L29/207;H01L21/02;H01L21/225;H01L29/20 |
主分类号 |
H01L29/207 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Scotia NY US |