| 发明名称 |
METAL-INSULATOR-METAL CAPACITOR STRUCTURE |
| 摘要 |
The disclosure is directed to semiconductor structures and, more particularly, to Metal-Insulator-Metal (MIM) capacitor structures and methods of manufacture. The method includes: forming at least one gate structure; removing material from the at least one gate structure to form a trench; depositing capacitor material within the trench and at an edge or outside of the trench; and forming a first contact in contact with a first conductive material of the capacitor material and a second contact in contact with a second conductive material of the capacitor material. |
| 申请公布号 |
US2017084681(A1) |
申请公布日期 |
2017.03.23 |
| 申请号 |
US201514861511 |
申请日期 |
2015.09.22 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BASKER Veeraraghavan S.;CHENG Kangguo;STANDAERT Theodorus E.;WANG Junli |
| 分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming at least one gate structure; removing material from the at least one gate structure to form a trench; depositing capacitor material within the trench and at an edge or outside of the trench; and forming a first contact in contact with a first conductive material of the capacitor material and a second contact in contact with a second conductive material of the capacitor material. |
| 地址 |
Armonk NY US |
