| 摘要 |
A method of manufacturing an image sensor device includes, in a first manufacturing facility, forming a first set of patterned silicon, metal, and insulating layers on a glass substrate, forming an electrical and mechanical protection layer over the first set of patterned silicon, metal, and insulating layers, and, in a second manufacturing facility, removing the electrical and mechanical protection layer, forming a second set of patterned silicon, metal, and insulating layers over the first set of patterned silicon, metal, and insulating layers, forming a plurality of photosensors in communication with at least the second set of patterned silicon, metal, and insulating layers to form an unpassivated image sensor device, and forming a passivation layer over the unpassivated image sensor device. The materials used in the first set of layers and second set of layers can be completely or partially different. |
| 主权项 |
1. A method of manufacturing an image sensor device comprising:
in a first manufacturing facility: forming a first set of patterned silicon, metal, and insulating layers on a glass substrate; forming an electrical and mechanical protection layer over the first set of patterned silicon, metal, and insulating layers; in a second manufacturing facility: removing the electrical and mechanical protection layer; forming a second set of patterned silicon, metal, and insulating layers over the first set of patterned silicon, metal, and insulating layers; forming a plurality of photosensors in communication with at least the second set of patterned silicon, metal, and insulating layers to form an unpassivated image sensor device; and forming a passivation layer over the unpassivated image sensor device. |
