SEMICONDUCTOR DEVICE WITH REDUCED LEAKAGE CURRENT AND FABRICATING METHOD THEREOF

摘要

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a light sensing feature, a negative oxide layer, a gate dielectric layer and a transfer gate. The light sensing feature is configured in the substrate to detect an incoming radiation. The negative oxide layer is over the light sensing feature. The gate dielectric layer is over the negative oxide layer. The transfer gate is over the gate dielectric layer.

主权项

1. A semiconductor device, comprising:
a substrate; a light sensing feature configured in the substrate to detect an incoming radiation; a negative oxide layer over the light sensing feature; a gate dielectric layer over the negative oxide layer; and a transfer gate over the gate dielectric layer.