THREE-DIMENSIONAL SEMICONDUCTOR DEVICE WITH VERTICAL AND HORIZONTAL CHANNELS IN STACK STRUCTURE HAVING ELECTRODES VERTICALLY STACKED ON THE SUBSTRATE

摘要

A three-dimensional (3D) semiconductor device includes a stack structure including electrodes vertically stacked on a substrate, a channel structure coupled to the electrodes to constitute a plurality of memory cells three-dimensionally arranged on the substrate, the channel structure including first vertical channels and second vertical channels penetrating the stack structure and a first horizontal channel disposed under the stack structure to laterally connect the first vertical channels and the second vertical channels to each other, a second horizontal channel having a first conductivity type and connected to a sidewall of the first horizontal channel of the channel structure, and conductive plugs having a second conductivity type and disposed on top ends of the second vertical channels.

主权项

1. A three-dimensional (3D) semiconductor device comprising:
a stack structure comprising electrodes that are vertically stacked on a substrate; a channel structure coupled to the electrodes to constitute a plurality of memory cells that are three-dimensionally arranged on the substrate, the channel structure comprising:
first vertical channels and second vertical channels that penetrate the stack structure; anda first horizontal channel that is under the stack structure and that laterally connects the first vertical channels and the second vertical channels to each other; a second horizontal channel that is connected to a sidewall of the first horizontal channel of the channel structure, the second horizontal channel having a first conductivity type; and conductive plugs that are on top ends of the second vertical channels, the conductive plugs having a second conductivity type.