发明名称 |
Offset-Printing Method for Three-Dimensional Printed Memory |
摘要 |
The present invention discloses an offset-printing method for a three-dimensional printed memory. The mask-patterns for different memory levels are merged onto a multi-region data-mask. At different printing steps, a wafer is offset by different values with respect to the data-mask. Accordingly, data-patterns from a same data-mask are printed into different memory levels. |
申请公布号 |
US2017084621(A1) |
申请公布日期 |
2017.03.23 |
申请号 |
US201615371235 |
申请日期 |
2016.12.07 |
申请人 |
ZHANG Guobiao |
发明人 |
ZHANG Guobiao |
分类号 |
H01L27/112;G11C17/18;G11C17/16 |
主分类号 |
H01L27/112 |
代理机构 |
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代理人 |
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主权项 |
1. An offset-printing method for a three-dimensional printed memory, comprising the steps of:
1) forming a substrate circuit on a semiconductor wafer, wherein said wafer comprises at least two adjacent dice including first and second dice; 2) forming a first memory level above said substrate circuit, including a first printing step for transferring a first mask pattern to a first data-coding layer in said first memory level, wherein the origin of said data-mask is initially aligned to the origin of said first die at said first printing step; 3) forming a second memory level above said first memory level, including a second printing step for transferring a second mask pattern to a second data-coding layer in said second memory level, wherein the origin of said data-mask is initially aligned to the origin of said second die at said second printing step; wherein said first and second mask patterns are located on a same data-mask. |
地址 |
Corvallis OR US |