SEMICONDUCTOR MEMORY DEVICE

摘要

According to an embodiment, a semiconductor memory device comprises: a first wiring line; a memory string connected to this first wiring line; and a plurality of second wiring lines connected to this memory string. In addition, this memory string comprises: a first semiconductor layer connected to the first wiring line; a plurality of second semiconductor layers connected to this first semiconductor layer; and a variable resistance element connected between this second semiconductor layer and the second wiring line. Moreover, of the first semiconductor layer and the plurality of second semiconductor layers, one includes a semiconductor of a first conductivity type, and the other includes a semiconductor of a second conductivity type.

主权项

1. A semiconductor memory device, comprising:
a first wiring line; a memory string connected to the first wiring line; and a plurality of second wiring lines connected to the memory string, the memory string comprising: a first semiconductor layer connected to the first wiring line; a plurality of second semiconductor layers connected to the first semiconductor layer; and a variable resistance element connected between the second semiconductor layer and the second wiring line, the first semiconductor layer including a semiconductor of a first conductivity type, and the plurality of second semiconductor layers including a semiconductor of a second conductivity type.