SINGLE ENDED BITLINE CURRENT SENSE AMPLIFIER FOR SRAM APPLICATIONS

摘要

Single ended bitline current sense amplifier for SRAM applications. The present disclosure relates to current sense read amplifier for use as a read amplifier in a memory arrangement of memory cell groups, wherein in each of the memory cell groups cells includes at least one read port connected to a read amplifier by a bitline, and wherein said read amplifiers are connected to a data output. The current sense read amplifier includes a voltage regulator to keep a bitline voltage at a constant voltage level below a power supply voltage and above a ground, a measurement circuit to detect a high current value and a low current value in an input signal, and a generator to generate a high voltage level output signal when the high current value input is detected and to generate a low voltage level output signal when the low current level value is detected.