| 发明名称 |
ELECTRONIC DEVICES WITH NANORINGS, AND METHODS OF MANUFACTURE THEREOF |
| 摘要 |
Systems and methods for electronic devices are presented. A device includes a substrate. An Indium Gallium Nitride (InGaN) nanoring is formed over the substrate. The InGaN nanoring includes an alloy of Indium Nitride (InN) and Gallium Nitride (GaN). The alloy includes at least 6 percent Indium. A GaN layer may be formed over the InGaN nanoring, and a first electrode is formed over the GaN layer. In one embodiment, the alloy includes less than about 70 percent Indium. |
| 申请公布号 |
US2017084786(A1) |
申请公布日期 |
2017.03.23 |
| 申请号 |
US201514856971 |
申请日期 |
2015.09.17 |
| 申请人 |
Freescale Semiconductor, Inc. |
发明人 |
Theodore Nirmal David |
| 分类号 |
H01L33/32;H01L31/18;H01L31/0304;H01L31/0352;H01L33/20;H01L33/00 |
主分类号 |
H01L33/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device, comprising:
a substrate; an Indium Gallium Nitride (InGaN) nanoring over the substrate, the InGaN nanoring including an alloy of Indium Nitride (InN) and Gallium Nitride (GaN), the alloy including at least 6 percent Iridium; and a first electrode over the InGaN nanoring. |
| 地址 |
Austin TX US |
