Methods of Forming Buried Junction Devices in Silicon Carbide Using Ion Implant Channeling and Silicon Carbide Devices Including Buried Junctions

摘要

A semiconductor device structure according to some embodiments includes a silicon carbide substrate having a first conductivity type, a silicon carbide drift layer having the first conductivity type on the silicon carbide substrate and having an upper surface opposite the silicon carbide substrate, and a buried junction structure in the silicon carbide drift layer. The buried junction structure has a second conductivity type opposite the first conductivity type and has a junction depth that is greater than about one micron.

主权项

1. A semiconductor device, comprising:
a silicon carbide substrate having a first conductivity type; a silicon carbide drift layer having the first conductivity type on the silicon carbide substrate and having an upper surface opposite the silicon carbide substrate; and a buried junction structure in the silicon carbide drift layer, wherein the buried junction structure comprises floating regions having a second conductivity type opposite the first conductivity type; wherein the buried junction structure comprises a first buried junction structure having a first junction depth, and wherein the semiconductor device further comprises a second buried junction structure having a second junction depth that is greater than the first junction depth; and wherein a distance between the first buried junction structure and the second buried junction structure is about 0.1 micron to about 3 microns.