| 发明名称 |
MAGNETIC MEMORY DEVICES |
| 摘要 |
A magnetic memory device includes a substrate, a circuit device on the substrate, a lower electrode electrically connected to the circuit device, a magnetic tunnel junction structure (MTJ structure) on the lower electrode, and an upper electrode on the MTJ structure. The MTJ structure includes a pinned layer structure including at least one crystalline ferromagnetic layer and at least one amorphous ferromagnetic layer, a free layer, and a tunnel barrier layer between the pinned layer structure and the free layer. |
| 申请公布号 |
US2017084822(A1) |
申请公布日期 |
2017.03.23 |
| 申请号 |
US201615169775 |
申请日期 |
2016.06.01 |
| 申请人 |
KIM Ki-Woong;KIM Ju-Hyun;PARK Yong-Sung;OH Se-Chung;LEE Joon-Myoung |
发明人 |
KIM Ki-Woong;KIM Ju-Hyun;PARK Yong-Sung;OH Se-Chung;LEE Joon-Myoung |
| 分类号 |
H01L43/02;H01L43/10;H01L43/12;H01L43/08 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic memory device, comprising:
a substrate; a circuit device on the substrate; a lower electrode electrically connected to the circuit device; a magnetic tunnel junction structure (MTJ structure) on the lower electrode, the MTJ structure including:
a pinned layer structure including at least one crystalline ferromagnetic layer and at least one amorphous ferromagnetic layer;a free layer; anda tunnel barrier layer between the pinned layer structure and the free layer; and an upper electrode on the MTJ structure. |
| 地址 |
Hwaseong-si KR |
