发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
Provided is a semiconductor device with improved performance. The semiconductor device includes a photodiode having a charge storage layer (n-type semiconductor region) and a surface layer (p-type semiconductor region), and a transfer transistor having a gate electrode and a floating diffusion. The surface layer (p-type semiconductor region) of a second conductive type formed over the charge storage layer (n-type semiconductor region) of a first conductive type includes a first sub-region having a low impurity concentration, and a second sub-region having a high impurity concentration. The first sub-region is arranged closer to the floating diffusion than the second sub-region. |
申请公布号 |
US2017084658(A1) |
申请公布日期 |
2017.03.23 |
申请号 |
US201615364456 |
申请日期 |
2016.11.30 |
申请人 |
Renesas Electronics Corporation |
发明人 |
KAMINO Takeshi;GOTO Yotaro |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |