Active Device Which Has A High Breakdown Voltage, Is Memory-Less, Traps Even Harmonic Signals And Circuits Used Therewith

摘要

An active device and circuits utilized therewith are disclosed. In an aspect, the active device comprises an n-type transistor having a drain, gate and bulk and a p-type transistor having a drain, gate and bulk. The n-type transistor and the p-type transistor include a common source. The device includes a first capacitor coupled between the gate of the n-type transistor and the gate of the p-type transistor, a second capacitor coupled between the drain of the n-type transistor and the drain of p-type transistor and a third capacitor coupled between the bulk of the n-type transistor and the bulk of p-type transistor. The active device has a high breakdown voltage, is memory less and traps even harmonic signals.

主权项

1. An active device comprises:
an n type transistor having a drain, gate and bulk; a p-type transistor having a drain, gate and bulk; wherein then-type transistor and the p-type transistor share a common source; a first capacitor coupled between the gate of n-type transistor and the gate of p-type transistor; a second capacitor coupled between the drain of n-type transistor and the drain of p-type transistor; and a third capacitor coupled between the bulk of n-type transistor and the bulk of p-type transistor; wherein the active device has a high breakdown voltage, is memory less and traps even harmonic signals.