| 发明名称 |
PLASMA ETCHING SYSTEMS AND METHODS USING EMPIRICAL MODE DECOMPOSITION |
| 摘要 |
A substrate etching system includes an etching control module, a filtering module, and an endpoint module. The etching control module selectively begins plasma etching of a substrate within an etching chamber. The filtering module, during the plasma etching of the substrate: receives a signal including endpoint information; decomposes the signal using empirical mode decomposition (EMD); and generates a filtered signal based on results of the EMD. The endpoint module indicates when an endpoint of the plasma etching of the substrate has been reached based on the filtered signal. The etching control module ends the plasma etching of the substrate in response to the indication that the endpoint of the plasma etching of the substrate has been reached. |
| 申请公布号 |
US2017084433(A1) |
申请公布日期 |
2017.03.23 |
| 申请号 |
US201615365228 |
申请日期 |
2016.11.30 |
| 申请人 |
LAM RESEARCH CORPORATION |
发明人 |
ALBAREDE LUC;KABOUZI YASSINE;LUQUE JORGE;BAILEY ANDREW D. |
| 分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate etching system, comprising:
an etching control module that selectively begins plasma etching of a substrate within an etching chamber; a filtering module that, during the plasma etching of the substrate:
receives a signal including endpoint information;decomposes the signal using empirical mode decomposition (EMD); andgenerates a filtered signal based on results of the EMD; and an endpoint module that indicates when an endpoint of the plasma etching of the substrate has been reached based on the filtered signal, wherein the etching control module ends the plasma etching of the substrate in response to the indication that the endpoint of the plasma etching of the substrate has been reached. |
| 地址 |
FREMONT CA US |
