Method of Fabricating a Mosfet With an Undoped Channel

摘要

A method of fabricating a MOSFET with an undoped channel is disclosed. The method comprises fabricating on a substrate a semiconductor structure having a dummy poly gate, dummy interlayer (IL) oxide, and a doped channel. The method further comprises removing the dummy poly gate and the dummy IL oxide to expose the doped channel, removing the doped channel from an area on the substrate, forming an undoped channel for the semiconductor structure at the area on the substrate, and forming a metal gate for the semiconductor structure. Removing the dummy poly gate may comprise dry and wet etch operations. Removing the dummy IL oxide may comprise dry etch operations. Removing the doped channel may comprise anisotropic etch operations on the substrate. Forming an undoped channel may comprise applying an epitaxial process to grow the undoped channel. The method may further comprise growing IL oxide above the undoped channel.

主权项

1. A method of fabricating a MOSFET with an undoped channel, the method comprising:
fabricating a dummy poly gate, dummy interlayer (IL) oxide, and a doped channel on a substrate; removing the dummy poly gate and the dummy IL oxide to expose the doped channel; removing the exposed doped channel; forming an undoped channel in place of the removed exposed doped channel, wherein the undoped channel is directly above a doped well in the substrate; and forming a metal gate for the semiconductor structure.