| 发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A thin film transistor substrate including a second electrode connected to a first electrode within a shared contact hole; and a fourth electrode connected to a third electrode within the shared contact hole, wherein the shared contact hole penetrates through a plurality of stacked insulating layers, and wherein an insulating layer below at least one of a connection portion in which the first electrode and the second electrode are connected and a connection portion in which the third electrode and the fourth electrode are connected has an undercut structure within the shared contact hole. |
| 申请公布号 |
US2017084631(A1) |
申请公布日期 |
2017.03.23 |
| 申请号 |
US201615265010 |
申请日期 |
2016.09.14 |
| 申请人 |
LG DISPLAY CO., LTD. |
发明人 |
KIM Kangil;KIM Haye;PARK Chansoo |
| 分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor substrate, comprising:
a second electrode connected to a first electrode within a shared contact hole; and a fourth electrode connected to a third electrode within the shared contact hole, wherein the shared contact hole penetrates through a plurality of stacked insulating layers, and wherein an insulating layer below at least one of a connection portion in which the first electrode and the second electrode are connected and a connection portion in which the third electrode and the fourth electrode are connected has an undercut structure within the shared contact hole. |
| 地址 |
Seoul KR |
