SEMICONDUCTOR DEVICES INCLUDING A DUMMY GATE STRUCTURE ON A FIN

摘要

Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.

主权项

1. A semiconductor device comprising:
a substrate comprising a first region and a second region; a first fin protruding from the substrate and extending in a first direction on the first region; a recess extending in a second direction different from the first direction in the first fin; a dummy gate structure overlapping the recess and extending in the second direction; second and third fins on the second region, protruding from the substrate, and extending in the first direction; and a trench between the second fin and the third fin such that the second fin and the third fin are spaced apart from each other, wherein a height and a width of the recess are smaller than those of the trench.