THIN FILM TRANSISTOR ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE

摘要

A method for forming a thin film transistor array substrate (110) comprises forming an active layer (140) using a zinc target under an environment of oxygen and nitrogen in a sputtering chamber, and forming a source/drain buffer layer (151/152) on the active layer (140) using the zinc target by a sputtering process in the sputtering chamber under an environment containing one of oxygen and nitrogen. A thin film transistor array substrate (110) comprises an active layer (140), a source/drain buffer layer (151/152) on and in contact with the active layer (140), wherein the active layer (140) is made of oxynitride compound of zinc, and the source/drain buffer layer (151/152) is made of one of an oxide and a nitride of zinc. A display device comprising the thin film transistor array substrate (110) is also provided.