发明名称 |
EMITTERS OF A BACKSIDE CONTACT SOLAR CELL |
摘要 |
A system and method of patterning dopants of opposite polarity to form a solar cell is described. Two dopant films are deposited on a substrate. A laser is used to pattern the N-type dopant, by mixing the two dopant films into a single film with an exposure to the laser and/or drive the N-type dopant into the substrate to form an N-type emitter. A thermal process drives the P-type dopant from the P-type dopant film to form P-type emitters and further drives the N-type dopant from the single film to either form or further drive the N-type emitter. |
申请公布号 |
US2017084770(A1) |
申请公布日期 |
2017.03.23 |
申请号 |
US201615365742 |
申请日期 |
2016.11.30 |
申请人 |
Loscutoff Paul;Harley Gabriel |
发明人 |
Loscutoff Paul;Harley Gabriel |
分类号 |
H01L31/065;H01L31/0224 |
主分类号 |
H01L31/065 |
代理机构 |
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代理人 |
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主权项 |
1. A solar cell, comprising:
a solar cell substrate; a homogenous stack of at least two dopant source material layers disposed over a first portion of the solar cell substrate, wherein a dopant material source layer of the at least two dopant material source layers has dopants of an impurity conductivity type of opposite polarity from dopants of an impurity conductivity type of an adjacent dopant material source layer of the at least two dopant material source layers; a heterogeneous dopant source material layer formed in a second portion of the solar cell substrate, the heterogeneous dopant source material layer including a mixture of the dopants of both the different impurity conductivity types from the at least two dopant source material layers, the second portion of the solar cell substrate different than the first portion of the solar cell substrate; and a first emitter having dopants of one impurity conductivity type of the different impurity conductivity types, the first emitter disposed under the heterogeneous dopant source material layer. |
地址 |
Castro Valley CA US |