A Wide Band Gap Semiconductor Device and Its Fabrication Process

摘要

The present invention provides a wide band gap semiconductor device and its fabrication process, and pertains to the technical field of semiconductor fabrication technology. It resolves the current issue that the wide band gap semiconductor devices are easy to be affected by thermal expansion. The present wide band gap semiconductor device comprises a chip with a substrate made of a wide band gap semiconductor material, and a base mount made of a wide band gap semiconductor material. In addition, there is a recessed slot structure designed on the base mount to hold the chip. The present invention also provides a fabrication process for wide band gap semiconductor devices. In the wide band gap semiconductor device described in the present invention, both of the base mount and the substrate of the chip are made of wide band gap semiconductor materials, which can achieve the purpose of rapid heat transfer.

主权项

1. A wide band gap semiconductor device comprising:
a chip (1) with a substrate made of a wide band gap semiconductor material; a base mount (2) made of a wide band gap semiconductor material; and a recessed slot structure (4) designed on the base mount (2) to hold and position the chip (1).