| 发明名称 |
TRANSISTOR HAVING AN ACTIVE CHANNEL REGION |
| 摘要 |
In some examples, a transistor includes a drain, a channel, and a gate. The channel surrounds the drain and has a channel length to width ratio. The gate is over the channel to provide an active channel region that has an active channel region length to width ratio that is greater than the channel length to width ratio. |
| 申请公布号 |
US2017084609(A1) |
申请公布日期 |
2017.03.23 |
| 申请号 |
US201615369951 |
申请日期 |
2016.12.06 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
Benjamin Trudy |
| 分类号 |
H01L27/06;B41J2/14;H01L29/10 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transistor for a printhead, comprising:
a drain; a source; a channel between the drain and the source, the channel surrounding the drain and having a channel length to width ratio; and a gate over the channel to provide an active channel region that has an active channel region length to width ratio that is greater than the channel length to width ratio. |
| 地址 |
Houston TX US |
