| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM |
| 摘要 |
A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film. |
| 申请公布号 |
US2017084455(A1) |
申请公布日期 |
2017.03.23 |
| 申请号 |
US201615368337 |
申请日期 |
2016.12.02 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
MORIYA Atsushi;NAKAISO Naoharu;ORIHASHI Yugo;MURAKAMI Kotaro |
| 分类号 |
H01L21/02;C23C16/455;C30B25/04;H01L21/324;C30B25/16;C30B25/20;C30B29/06;C23C16/24;C30B25/18 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising:
alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, whereby a first seed layer as an epitaxial silicon layer is formed on the monocrystalline silicon and a second seed layer differing in crystal structure from the first seed layer is formed on the insulation film; and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is epitaxially grown on the first seed layer and a second silicon film differing in crystal structure from the first silicon film is grown on the second seed layer. |
| 地址 |
Tokyo JP |
