NON-VOLATILE INVERTER

摘要

A non-volatile inverter may be configured to perform a memory function. The non-volatile inverter may include first and second transistors. The first transistor may include a first gate electrode, a first electrode, and a second electrode. The second transistor may include a second gate electrode and a third electrode and may share the second electrode with the first transistor. The first transistor may include a first switching layer and a charge trap layer. The first switching layer may be configured to switch between a high resistance state and a low resistance state. The charge trap layer may be configured to trap or de-trap charges according to the resistance state of the first switching layer. The first switching layer may include a P-N diode. The second transistor may include a second gate switching layer and a charge trap layer.

主权项

1. A non-volatile inverter, comprising:
a first transistor, including,
a first gate electrode,a first electrode,a second electrode,a first switching layer having a resistance state, the first switching layer configured to switch the resistance state of the first switching layer between a high resistance state and a low resistance state, anda charge trap layer configured to trap or de-trap charges according to the resistance state of the first switching layer; a second transistor including a second gate electrode and a third electrode, the second transistor being configured to share the second electrode with the first transistor; an input line including an input terminal, the input line being configured to connect the first gate electrode to the second gate electrode; and an output line including an output terminal, the output line coupled to the second electrode.