发明名称 |
MEMORY DEVICE WITH SHORTENED PRE-CHARGING TIME FOR BIT-LINE |
摘要 |
The present disclosure may provide a memory device including a page buffer and bit-lines coupled thereto with a less load of the bit-lines. In one aspect of the present disclosure, there is provided a memory device comprising: bit-lines, each bit-line having opposite first and second ends; plugs coupled respectively to the bit-lines, each plug disposed between and excluding the first and second ends; and a page buffer coupled to the plugs. |
申请公布号 |
US2017084315(A1) |
申请公布日期 |
2017.03.23 |
申请号 |
US201615045941 |
申请日期 |
2016.02.17 |
申请人 |
SK hynix Inc. |
发明人 |
LEE Nam Jae |
分类号 |
G11C7/10;G11C7/12;G11C5/06 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
1. A memory device comprising:
a plurality of bit-lines, each bit-line having opposite first and second ends and extending in a first direction to have a predetermined length; a page buffer; and a plurality of plugs, each of the plurality of plugs coupling each of the plurality bit-lines to the page buffer, each plug being disposed between and excluding the first and second ends, wherein each of the plugs is disposed at a central portion of an entire length of each of the bit-lines between the first and second ends of each of the bit-lines. |
地址 |
Gyeonggi-do KR |