发明名称 MEMORY DEVICE WITH SHORTENED PRE-CHARGING TIME FOR BIT-LINE
摘要 The present disclosure may provide a memory device including a page buffer and bit-lines coupled thereto with a less load of the bit-lines. In one aspect of the present disclosure, there is provided a memory device comprising: bit-lines, each bit-line having opposite first and second ends; plugs coupled respectively to the bit-lines, each plug disposed between and excluding the first and second ends; and a page buffer coupled to the plugs.
申请公布号 US2017084315(A1) 申请公布日期 2017.03.23
申请号 US201615045941 申请日期 2016.02.17
申请人 SK hynix Inc. 发明人 LEE Nam Jae
分类号 G11C7/10;G11C7/12;G11C5/06 主分类号 G11C7/10
代理机构 代理人
主权项 1. A memory device comprising: a plurality of bit-lines, each bit-line having opposite first and second ends and extending in a first direction to have a predetermined length; a page buffer; and a plurality of plugs, each of the plurality of plugs coupling each of the plurality bit-lines to the page buffer, each plug being disposed between and excluding the first and second ends, wherein each of the plugs is disposed at a central portion of an entire length of each of the bit-lines between the first and second ends of each of the bit-lines.
地址 Gyeonggi-do KR