| 摘要 |
A method for separating a semiconductor substrate body (2) from a functional layer thereon, comprising the steps of: injecting ions into an upper surface of a semiconductor substrate (1), wherein the depth of ion injection is 0.1 μm-100 μm, and an ion damage layer (3) is produced beneath the surface of the semiconductor substrate (1); preparing a functional layer on the upper surface of the semiconductor substrate (1); and separating the semiconductor substrate (1) from the functional layer thereon. In the method, the functional layer is firstly prepared on the substrate (1) having been subjected to ion injection, and is then separated on the ion damage layer (3), and an electronic device is prepared on the surface of the semiconductor substrate (1). Since the thickness of the semiconductor substrate (1) depends on the depth of icon injection, the semiconductor substrate (1) has the same function and effect with an SOI film; moreover, a bonding process is not needed, thereby reducing the production process and decreasing the production costs. |
