| 摘要 |
This method for manufacturing a silicon carbide epitaxial substrate is provided with: a step for heating and degassing a reaction chamber of a film forming device; and a step for epitaxially growing a silicon carbide layer on the surface of a silicon carbide single crystal substrate using a gas containing silicon atoms, a gas containing carbon atoms, ammonia gas, and hydrogen gas, i.e., carrier gas, having a dew point equal to or below -100°C, said silicon carbide single crystal substrate being in the reaction chamber. |
