SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF

摘要

A semiconductor arrangement and methods of formation are provided. A semiconductor arrangement includes a semiconductor column on a buffer layer over a substrate. The buffer layer comprises a conductive material. Both a first end of the semiconductor column and a bottom contact are connected to a buffer layer such that the first end of the semiconductor column and the bottom contact are connected to one another through the buffer layer, which reduces a contact resistance between the semiconductor column and the bottom contact. A second end of the semiconductor column is connected to a top contact. In some embodiments, the first end of the semiconductor column corresponds to a source or drain of a transistor and the second end corresponds to the drain or source of the transistor.

主权项

1. A semiconductor arrangement, comprising:
a buffer layer disposed over a portion of a substrate, the buffer layer comprising a conductive material; a plurality of semiconductor columns disposed over the buffer layer, wherein a first semiconductor column of the plurality of semiconductor columns is in contact with the buffer layer; a top contact disposed over the plurality of semiconductor columns and electrically coupled to the first semiconductor column; and a bottom contact in contact with the buffer layer and electrically coupled to the first semiconductor column through the buffer layer.