| 摘要 |
A semiconductor device is provided with a source electrode (8), a protective film (15) provided on the source electrode (8), and a plating film (16) on the portion of the source electrode (8) on which the protective film (15) is not provided, channels not being provided directly under the triple-point portions in which the plating film (16), the protective film (15), and the source electrode (8) contact each other. A second first-conductivity-type region (4) is also not provided to the semiconductor device directly under the triple-point portions in which the plating film (16), the protective film (15), and the source electrode (8) contact each other. This configuration makes it possible to improve reliability in a semiconductor device in which pin-shaped electrodes are joined by solder. |
