ELECTROSTATIC DISCHARGE PROTECTION SEMICONDUCTOR DEVICE

摘要

An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, at least a first doped region formed in the source region, and at least a second doped region formed in the drain region. The source region, the drain region and the second doped region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The second doped region is electrically connected to the first doped region.

主权项

1. An electrostatic discharge (ESD) protection semiconductor device comprising:
a substrate; a gate set formed on the substrate; a source region and a drain region formed in the substrate respectively at two sides of the gate set, the source region and the drain region comprising a first conductivity type, and the drain region being electrically connected to an input/output (I/O) pad; a first doped region formed in the source region, the first doped region comprising a second conductivity type, and the first conductivity type and the second conductivity type being complementary to each other; and a second doped region formed in the drain region, the second doped region comprising the first conductivity type, and the second doped region being electrically connected to the first doped region by wiring, wherein the second doped region is not grounded.