| 发明名称 |
VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME |
| 摘要 |
A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a vertical direction with respect to a top surface of the substrate, a plurality of non-metal gate patterns surrounding the channels and being stacked on top of each other and spaced apart from each other along the vertical direction, and a plurality of metal gate patterns stacked on top of each other. The metal gate patterns are spaced apart from each other along the vertical direction. Each of the metal gate patterns surrounds a corresponding one of the non-metal gate patterns. |
| 申请公布号 |
US2017084532(A1) |
申请公布日期 |
2017.03.23 |
| 申请号 |
US201615271605 |
申请日期 |
2016.09.21 |
| 申请人 |
SON Yong-Hoon;YEO Cha-Dong;CHOI Han-Mei;KIM Kyung-Hyun;NAM Phil-Ouk;PARK Kwang-Chui;SOHN Yeon-Sil;LEE Jin-I;JUNG Won-Bong |
发明人 |
SON Yong-Hoon;YEO Cha-Dong;CHOI Han-Mei;KIM Kyung-Hyun;NAM Phil-Ouk;PARK Kwang-Chui;SOHN Yeon-Sil;LEE Jin-I;JUNG Won-Bong |
| 分类号 |
H01L23/522;H01L21/768;H01L23/532;H01L27/115;H01L23/528 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A vertical memory device, comprising:
a substrate; a plurality of channels on the substrate, the channels extending in a vertical direction with respect to a top surface of the substrate; a plurality of non-metal gate patterns surrounding the channels, the non-metal gate patterns being stacked on top of each other and spaced apart from each other along the vertical direction; and a plurality of metal gate patterns stacked on top of each other and spaced apart from each other along the vertical direction, each of the metal gate patterns surrounding a corresponding one of the non-metal gate patterns. |
| 地址 |
Yongin-si KR |
