SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THE SAME, AND PATTERNING METHOD

摘要

A method of fabricating a semiconductor device includes forming first and second active patterns on first and second regions, respectively, of a substrate, forming first and second gate structures on the first and second active patterns, respectively, forming a coating layer to cover the first and second gate structures and the first and second active patterns, and forming a first recess region in the first active pattern between the first gate structures and a second recess region in the second active pattern between the second gate structures.

主权项

1. A method of fabricating a semiconductor device, comprising:
providing a substrate having a first region and a second region; forming first and second active patterns at the first and second regions, respectively, of the substrate; forming first gate structures across the first active pattern as spaced apart from each other by a first distance along the first active pattern, and forming second gate structures across the second active pattern as spaced apart from each other by a second distance along the second active pattern; forming a coating layer to cover the first and second gate structures and the first and second active patterns; performing a recess process to form a first recess in the first active pattern between the first gate structures and a second recess in the second active pattern between the second gate structures; and forming a source/drain epitaxial layer in the first and second recesses, wherein the coating layer is formed to a first thickness on a region of the first active pattern between the first gate structures and to a second thickness different from the first thickness on a region of the second active pattern between the second gate structures.