TWO-DIMENSIONAL LARGE-AREA GROWTH METHOD FOR CHALCOGEN COMPOUND, METHOD FOR MANUFACTURING CMOS-TYPE STRUCTURE, FILM OF CHALCOGEN COMPOUND, ELECTRONIC DEVICE COMPRISING FILM OF CHALCOGEN COMPOUND, AND CMOS-TYPE STRUCTURE

摘要

Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, uniformly diffusing a vaporized chalcogen element, a vaporized chalcogen precursor compound or a chalcogen compound represented by M′X′2+δ within the film; and, thereafter, forming a film of a chalcogen compound represented by MX2 by forming the chalcogen compound represented by MX2 through post-heating.

主权项

1. A two-dimensional large-area growth method for a chalcogen compound, the method comprising:
forming a film of a transition metal element or a Group V, or Group VI element by depositing the transition metal element or the Group V, or Group VI element on a substrate; diffusing the chalcogen element, the chalcogen precursor compound or the chalcogen compound represented by M′X′2+δ into the film of the transition metal element or the Group V, or Group VI element by contacting through vaporization at least one selected from the group consisting of a chalcogen element, a chalcogen precursor compound and a chalcogen compound represented by M′X′2+δ and combinations thereof with the film of the transition metal element or the Group V, or Group VI element, wherein M′ is a transition metal element or a Group V, or Group VI element, X′ is a chalcogen element, and 0≦δ≦0.5; and forming a film of the chalcogen compound represented by MX2 by post-heating the film of the transition metal element or the Group V, or Group VI element including the resultant diffused chalcogen element, chalcogen precursor compound or chalcogen compound represented by M′X′2+δ, wherein M is a transition metal element or a Group V, or Group VI element and X is a chalcogen element, wherein, in the film of the transition metal element or the Group V, or Group VI element comprising the diffused chalcogen element, precursor compound or chalcogen compound represented by M′X′2+δ, an atom ratio of the chalcogen element to the transition metal element or the Group V element is greater than 2.