| 摘要 |
A substrate processing method is provided with a first processing step for supplying a first processing liquid that contains hydrofluoric acid and nitric acid in a first mixing ratio to a peripheral edge part of a rotating substrate and etching a film to be eliminated, and a second processing step for supplying a second processing liquid that contains hydrofluoric acid and nitric acid in a second mixing ratio, wherein the hydrofluoric acid content is lower and the nitric acid content is higher than the first processing liquid, to the peripheral edge part of the rotating substrate after the first processing liquid has been supplied to the substrate and etching the film to be eliminated. Thus, when a film to be eliminated formed from SiGe, amorphous silicon, or polysilicon is eliminated by wet etching from the peripheral edge part of the substrate, a foundation film, for example a film formed from SiO2, present beneath the film to be eliminated can be appropriately left behind. |
