| 摘要 |
The purpose of the present invention is to reduce particle generation during sputtering. Provided to achieve this purpose is a sputtering target material containing, by at.%, 10-50% B, wherein the remainder comprises unavoidable impurities and at least one of Co and Fe. The value of the intensity ratio [I((CoFe)3B)/I((CoFe)2B)], which is the ratio of the X-ray diffraction intensity [I((CoFe)3B)] of (CoFe)3B(121) to the X-ray diffraction intensity [I((CoFe)2B)] of (CoFe)2B(200), the intensity ratio [I(Co3B)/I(Co2B)], which is the ratio of the X-ray diffraction intensity [I(Co3B)] of Co3B(121) to the X-ray diffraction intensity [I(Co2B)] of Co2B(200), or the intensity ratio [I(Fe3B)/I(Fe2B)], which is the ratio of the X-ray diffraction intensity [I(Fe3B)] of Fe3B(121) to the X-ray diffraction intensity [I(Fe2B)] of Fe2B(200) does not exceed 1.50. |
