| 摘要 |
The present invention refers to a photosensitive pixel structure (10) comprising a substrate layer (15) and an interface layer (50), wherein the interface layer (50) is provided at least partially on a first surface of the substrate layer (15) and wherein the interface layer (50) at least partially comprises a first material layer (51) and the interface layer (50) at least partially comprises a second material layer (52) covering the first material layer (51), such that the first material layer (51) is at least partially sandwiched between the second material layer (52) and the substrate (15). The invention further refers to an array and an implant comprising such a pixel structure as well as a method to provide a pixel structure, wherein further the second material layer comprises a thickness chosen from the range of 200nm-600nm, preferably from the range of 300nm-500nm, most preferably from the range of 320nm - 450nm. |
