STRUCTURE FOR RADIOFREQUENCY APPLICATIONS AND PROCESS FOR MANUFACTURING SUCH A STRUCTURE

摘要

The invention relates to a structure (100) for radiofrequency applications comprising:
- a monocrystalline substrate (1),
- a polycrystalline silicon layer (2) directly on the monocrystalline substrate (1),
- an active layer (3) on the polycrystalline silicon layer (2), intended to receive radiofrequency components,
characterized in that at least a first portion (2a) of the polycrystalline silicon layer (2) extending from the interface (I) of the polycrystalline silicon layer (2) with the monocrystalline layer includes carbon and/or nitrogen atoms located at the grain boundaries of the polycrystalline silicon. The invention further relates to a process for manufacturing such a structure.