| 摘要 |
When an Si layer is formed on a substrate which has an insulating layer exposed to at least part of a surface, the layer quality of the formed Si layer can be improved. A three-dimensional flash memory includes a substrate made of single crystal silicon, an insulating layer formed on the surface of the substrate, a first silicon layer which is formed by homo epitaxial growth using a lower substrate as the single crystal silicon on the single crystal silicon, a second silicon layer which is formed on the insulating layer and has a crystal structure different from the first silicon layer. |
