发明名称 SiC半導体デバイス及びその製造方法
摘要 In some aspects of the invention, a layer containing titanium and nickel is formed on an SiC substrate. A nickel silicide layer containing titanium carbide can be formed by heating. A carbon layer precipitated is removed by reverse sputtering. Thus, separation of an electrode of a metal layer formed on nickel silicide in a subsequent step is suppressed. The effect of preventing the separation can be further improved when the relation between the amount of precipitated carbon and the amount of carbon in titanium carbide in the surface of nickel silicide from which the carbon layer has not yet been removed satisfies a predetermined condition.
申请公布号 JP6099298(B2) 申请公布日期 2017.03.22
申请号 JP20110120124 申请日期 2011.05.30
申请人 富士電機株式会社 发明人 今井 文一
分类号 H01L21/28 主分类号 H01L21/28
代理机构 代理人
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