| 摘要 |
An ESD protection device includes a Si substrate and a rewiring layer. The rewiring layer includes Ti/Cu/Ti electrodes are electrically connected through contact holes to an ESD protection circuit with Al electrodes films, which is formed at the surface of the Si substrate. The Al electrode film is electrically connected to the Ti/Cu/Ti electrode, whereas the Al electrode film is electrically connected to the Ti/Cu/Ti electrode. A diode forming region is formed between Al electrode films, whereas a diode forming region is formed between Al electrode films. The Ti/Cu/Ti electrode has no overlap with the diode forming region, whereas the Ti/Cu/Ti electrode has no overlap with the diode forming region. Thus, a semiconductor device is provided which is able to reduce the generation of parasitic capacitance, and able to be applied up to a higher frequency band. |
