发明名称 |
METHOD FOR MANUFACTURING A III-V GATE ALL AROUND SEMICONDUCTOR DEVICE |
摘要 |
A gate-all-around semiconductor device and a method for manufacturing a gate-all-around (GAA) semiconductor device are disclosed. The method comprises providing on a semiconductor substrate (100) in between STI regions (101) at least one suspended nanostructure (105) anchored by a source (121) and a drain region (122), the suspended nanostructure comprising a crystalline semiconductor material which is different from the semiconductor substrate. A gate stack (117) is provided around the at least one suspended nanostructure. |
申请公布号 |
EP2924738(B1) |
申请公布日期 |
2017.03.22 |
申请号 |
EP20150160743 |
申请日期 |
2015.03.25 |
申请人 |
IMEC VZW |
发明人 |
Waldron, Niamh;Merckling, Clement;Collaert, Nadine |
分类号 |
H01L29/775;B82Y10/00;B82Y40/00;H01L29/06;H01L29/10;H01L29/20;H01L29/40;H01L29/66 |
主分类号 |
H01L29/775 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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