发明名称 |
Method for making a passivated semiconductor substrate |
摘要 |
The present invention is related to a method for making a passivated semiconductor substrate comprising the steps of providing a mono-crystalline substrate surface comprising or consisting of semiconductor material other than silicon and forming a silicon layer on the substrate surface, such that the formed silicon layer is substantially lattice matched to said part of the substrate surface. It is also related to a semiconductor substrate passivated according to the method. |
申请公布号 |
EP1655767(B1) |
申请公布日期 |
2017.03.22 |
申请号 |
EP20050447233 |
申请日期 |
2005.10.13 |
申请人 |
IMEC |
发明人 |
Caymax, Matty;Bonzom, Renaud;Leys, Frederik;Meuris, Marc |
分类号 |
H01L21/02;H01L21/316 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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