| 摘要 |
The invention relates to an optoelectronic component and a method for producing an optoelectronic component, wherein a layer structure having a positively doped semiconductor layer (2 or 3) and a negatively doped semiconductor layer (3 or 2) with an active zone for generating light, and a mirror layer (4) is grown on a growth substrate, wherein the layer structure is fixed on a first side of a carrier (10) by means of a connecting layer (8) and wherein electrical contacts for the layer structure are introduced via a second side of the carrier (10) and the growth substrate is removed. |
