| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium oxide single crystal capable of greatly improving wasting of raw materials, and to provide a gallium oxide single crystal substrate.SOLUTION: A gallium oxide single crystal 13 includes a 1-70% twin crystal 14. The gallium oxide single crystal 13 is produced by EFG method. The twin crystal 14 is formed in a belt-shape along a pulling-up direction. A gallium oxide single crystal substrate includes the gallium oxide single crystal 13. The gallium oxide single crystal substrate has a surface to which CMP processing is applied, and is formed in a striped shape having recesses and protrusions each width of which is aligned in the range of 3-10 μm by a difference of a polishing rate on each crystal surface. |
