| 摘要 |
The present invention provides a vertical LED chip structure and a manufacturing method therefor. A transparent conducting contact layer, a low-refractive index dielectric layer provided with a distribution pattern, and a reflecting layer are sequentially formed on a P-GaN layer to form a composite reflecting mirror. In this way, the low-refractive index dielectric layer can account for a large area of the composite reflecting mirror, and the light absorption ratio of the reflecting mirror can be greatly reduced. Moreover, as the transparent conducting contact layer has high transverse electrical conductivity, current can be uniformly distributed on the whole P-GaN layer, and the comprehensive and effective reflectivity of the composite reflecting mirror can be effectively increased. |
