| 摘要 |
The invention provides a method for forming an aluminum oxide film, and the aluminum oxide film is formed through a sputtering method at a stable oxidizability and high speed of film forming. The method provided by the invention comprises a first plasma generation step which enables plasma to be generated in a vacuum container containing sputtering gas and reactant gas; a second plasma generation step which enables a sputtering voltage to an aluminum target and enables magnetic control plasma to be generated through a static magnetic field; and a control step which achieves the control of the flow of the reactant gas into the vacuum container. Moreover, the constant-voltage control of the sputtering voltage is achieved in the second plasma generation step. In the control step, the flow of thee reactant gas is controlled in the second plasma generation step, so as to enable a sputtering current value to be a targeted current value. The first plasma generation step is a step of at least enabling high-frequency inductive coupling plasma to be generated in the second plasma generation step through employing a high-frequency antenna consisting of a conductor with the number of turns being one less. |
